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Your search returned 31 records. Click on the hyperlinks to view further details of Titles.. |
Magazine Name : Ieee Transactions On Electron Devices
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Year : 1998 Volume number : 45 Issue: 08 |
Simulation And Design Of Inaias/Ingaas Pnp Heterojunction Bipolar Transistors
(Article)
Subject:
Hbts
,
Ingaas
,
Modeling
Author:
S.N.
Datta
Shen
Shi
page:
1634
-
1643
Complete Monte Carlo Rf Analysis Of Real' Short-Channel Compound Fet'S
(Article)
Subject:
Compound Noise
,
Monte-Carlo Method
,
Rf Analysis
Author:
Nigel
Cameron
S
Babiker
Asen
Asenov
page:
1644
-
1652
Thermal Stability Of Emitter Ballasted Hbt'S
(Article)
Subject:
Ballasting Resistor
,
Gaas
,
Hbt
,
Power Transistors
Author:
Michael G.
Adlerstein
page:
1653
-
1655
0.2- Fully -Self-Aligned Y-Shaped Gate Hjfet'S With Reduced Gate-Fringing Capacitance Fabricated Using Collimated Sputtrin And Electroless Au-Plating
(Article)
Subject:
Etching
,
Modfets
,
Plasma Materials
,
Processing Application
Author:
Shigeki
Wada
Masatoshi
Tokushima
Y
Hida
page:
1656
-
1662
A Comparison Of The Trap Properties And Locations Within Gaas Field Effect Transistors Measured Under Different Bias Conditions
(Article)
Subject:
Charge Carrier Processes
,
Impurities
Author:
M. Zafar
Iqbal
B E H
Jones
page:
1663
-
1670
Effect Of Emitter Layer Concentration On The Performance Of Gaas P-I Homojunction Far-Infraed Detectors A Comparison Of Theory And Experiment
(Article)
Subject:
Fir Detectors
,
Gaas
,
Interfacial Areas
Author:
Wen Zhong
Shen
A. G. U.
Perera
M.
Buchanan
page:
1671
-
1677
Generation Recombination Transient Effects In Partially Depleted Soi Transistors Systematic Experiments And Simulations
(Article)
Subject:
Carrier Lifetimes
,
Generation-Recombination
,
Sol Gel
Author:
D
Munteanu
Douglas A.
Weiser
Sorin
Cristoloveanu
page:
1678
-
1683
The Relation Phenomena Of Positive Charges Inthin Gate Oxide During Fowler-Nordheim Tunneling Stress
(Article)
Subject:
Fowler-Nordheim Tunneling
,
Gate Oxide
,
Positive Charges
Author:
Kow-Ming
Chang
Chii-Horng
Li
T L
Yeh
page:
1684
-
1689
Optimization Of Silicon-Germanium Tft'S Through The Control Of Amorphous Precurson Characteristics
(Article)
Subject:
Chemical Vapor Deposition (Cvd)
,
Liquid Crystal Displays
,
Thin-Film Transistors
Author:
Krishna C.
Saraswat
V.
Subramanian
page:
1690
-
1695
Stacked Gate Mid-Channel Injection Flash Eeprom Cell Part I Programming Speed And Efficiency Versus Device Structure
(Article)
Subject:
Byte-Shift
,
Flash Eeprom
,
High Performance
Author:
Dae M.
Kim
M
Cho
W. H
Kwon
page:
1696
-
1702
Stacked Gate Mid-Channel Injection Flash Eeprom Cell Part Ii Analysis Of Gate Current And Modeling Of Programming Characteristics
(Article)
Subject:
Flash Eeprom
,
Gate Current
,
Hot Carrier
Author:
Dae M.
Kim
M
Cho
W. H
Kwon
page:
1703
-
1709
18 Efficicient Silicon Photovoltaic Devices By Rapid Thermal Diffusion And Oxidation
(Article)
Subject:
Diffusion
,
Oxidation
,
Photovoltaics
,
Rapid Thermal Processing
Author:
Parag
Doshi
A
Rohatgi
page:
1710
-
1716
On The Power Dissipation In Dynamic Thershold Silicon-Insulator Cmos Inverter
(Article)
Subject:
Dynamic Thermal Loading
,
Silicon-On-Insulator (Soi)
,
Power Dissiption
Author:
J.W.
Philip
C H
Chan
Mansun
Chan
page:
1717
-
1724
Profile Design Considerations For Minimizing Base Transit Time In Sige Hbt'S
(Article)
Subject:
Base Transit Time Model
,
Heterojunction Bipolar Transistors
,
Sige
Author:
Vijay S.
Patrdi
M Jagadesh
Kumar
page:
1725
-
1731
Measurement Of Mosfet Substrate Dopant Profile Via Inversion Layer-To-Substrate Capacitance
(Article)
Subject:
Mosfets
,
Semiconductor Defects
,
Semiconductor Devices
Author:
C. H
Hsu
Charles Yu-Teh
Chiang
Yew Tong
Yeow
page:
1732
-
1736
Argon Ion -Implantation On Polysilicon Or Amorphous-Silicon For Boron Penetration Suppression In P Pmosfet
(Article)
Subject:
Ar Implantation
,
Boron Penetration
,
Pmosfets
Author:
Lurng Shehng
Lee
Chung Len
Lee
page:
1737
-
1744
Silc-Related Effects In Flash E2prom'S Part I A Quantitative Model For Steate Silc
(Article)
Subject:
Flash Eeprom
,
Integrated Continuous-Time Filters
,
Trap Generation
Author:
Jan De
Blauwe
Jan Van
Houdt
G.
Groeseneken
page:
1745
-
1750
Silc-Related Effects In Flash E2proms Part Prediction Of Steady State Silc Related Disturb Characteristics
(Article)
Subject:
Effects Of Egr
,
Prediction
,
Characteristics
Author:
Dirk
Wellekens
Jan De
Blauwe
Jan Van
Houdt
page:
1751
-
1760
Effects Of Transver5se Dopiong Variations On The Transient Response Of Silicon Avalanche Shaper Devvices
(Article)
Subject:
Avalanche Breakdown
,
Power Semiconductor Switches
,
Semiconductor Device Modeling
Author:
B.
Jalali
R. R
Joshi
John A.
Gaudet
page:
1761
-
1768
Extraction Of High-Frequency Equivalent Circuit Parameters Of Submicrom Gate- Length Mosfet'S
(Article)
Subject:
Extraction
,
High-Frequency
,
Mosfets
Author:
Roberto
Sung
Peter
Bendix
Mukunda B.
Das
page:
1769
-
1775
Fabrication And Characterization Of 18.6 Efficient Multicrystalline Silicon Solar Cells
(Article)
Subject:
Back Spots Surface Field
,
Gettering
,
Solar Cells
Author:
S
Narasimhan
A
Rohatgi
page:
1776
-
1783
The Roles Of Electric Fields And Iiiumination Levels In Passivating The Surface Of Silicon Solar Cells
(Article)
Subject:
Field Effect Transistor
,
Mos Capacitor
,
Silicon Solar Cell
,
Surface Passivation
Author:
Ying
Bai
J.C.
Phillips
Jonathan
Barnett
page:
1784
-
1790
Characterization Of Various Stress-Induced Oxide Traps In Mosfet'S By Using A Subthreshold Transient Current Technique
(Article)
Subject:
Characte Regognition
,
Various Implant Types
Author:
Tahui
Wang
Lu-Ping
Ching
Chimoon
Huang
page:
1791
-
1796
Hgh-Frequency Peformance Of Single Quantum Well Infrared Photo
(Article)
Subject:
High-Frequency
,
High Power
Author:
V.
Ryzhii
page:
1797
-
-
Rf Measyrement Technique For Characterizing Thin Dielectric Films
(Article)
Subject:
Capacitance Measurement
,
Capacitors
,
Dielectric Measurements
Author:
Zhengxiang
Ma
Andrew J.
Becker
P.
Polakos
page:
1811
-
1816
Analysis And Modeling Of Small-Signal Bipolar Transistor Operation At Arbitrary Injection Levels
(Article)
Subject:
Bipolar Transistor
,
Semiconductor Device Modeling
,
Charge Carrier Processes
Author:
N. F.
Rinaldi
H. C. De
Graaff
Y
Fujino
page:
1817
-
1825
Zero Voltage Switching Behavior Of Punchthrough And Nonpunchthrough Insulated Gate Bipolar Transis Tors
(Article)
Subject:
Voltage
,
Behavior
,
Transistor Model
Author:
S
Pendharkar
Krishna
Shenai
page:
1826
-
1835
Monte Carlo Calculation Of Neck Charging In Cathode-Ray Tubes
(Article)
Subject:
Cathode-Ray Tubes
,
Insulation
,
Monte Cario Methods
,
Surface Charge
Author:
Siebe T. De
Zwart
Benno H. W.
Hendriks
Niek
Lambert
page:
1836
-
1842
Accurate Extraction Of Revers Leakage Current Componts Of Shallow Silicided
(Article)
Subject:
Shallow Silicided Junction
,
Reverse Logistics
,
Subquarter-Micron Device
Author:
Hi-Deok
Lee
Jeongjae
Hwang
page:
1848
-
1849
Injuection Currents Analysis Of Buffer Junction
(Article)
Subject:
Buffer Layer
,
Injection Dependent Lifetime
,
Power Devices
Author:
Sang-Koo
Chung
page:
1850
-
1853
Reevaluation Of The Limit On Si Bipolar Transistors
(Article)
Subject:
Bipolar Breakdown
,
Cutoff Frequency
Author:
Kwok K.
Ng
Michel R.
Frei
Clifford A.
Ling
page:
1854
-
1858
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